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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
GLT6100L08LL-100ST100ns; Ultra low power 128k x 8 CMOS SRAMdistributorTSOP32-40°C85°C239 K
GLT6100L08LL-100TC100ns; Ultra low power 64K x 16 CMOS SRAMdistributorTSOP32-40°C85°C187 K
GLT6100L08LL-100TS100ns; Ultra low power 128k x 8 CMOS SRAMdistributorTSOP32-40°C85°C239 K
GLT6100L08SL-100ST100ns; Ultra low power 128k x 8 CMOS SRAMdistributorTSOP32-40°C85°C239 K
GLT6100L08SL-100TC100ns; Ultra low power 64K x 16 CMOS SRAMdistributorTSOP32-40°C85°C187 K
GLT6100L08SL-100TS100ns; Ultra low power 128k x 8 CMOS SRAMdistributorTSOP32-40°C85°C239 K
ISPLSI2128VL-100LB100100 MHz 2.5V in-system prommable superFAST high density PLDLattice-Semiconductor-CorporationBGA100-55°C125°C214 K
ISPLSI2128VL-100LT100100 MHz 2.5V in-system prommable superFAST high density PLDLattice-Semiconductor-CorporationTQFP100-55°C125°C214 K
ISPLSI2192VL-100LB144100 MHz 2.5V in-system prommable superFAST high density PLDLattice-Semiconductor-CorporationBGA144-55°C125°C163 K
ISPLSI2192VL-100LT128100 MHz 2.5V in-system prommable superFAST high density PLDLattice-Semiconductor-CorporationTQFP128-55°C125°C163 K
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