Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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AL108-338 | GaAs PHEMT switchable gain LNA | distributor | - | - | -65°C | 150°C | 188 K |
AWL10G | 1000 V, 1.0 A avalanche glass passivated bridge rectifier | distributor | WOB | 4 | -50°C | 150°C | 17 K |
RL101FG | 50 V, 1 A, Glass passivated junction fast switching rectifier | distributor | - | 2 | -55°C | 150°C | 157 K |
RL1024PAG-712 | Linear photodiode array imager. Window: glass. 1024 active pixels. | distributor | Ceramic DIP | 20 | -25°C | 55°C | 173 K |
RL1024PAQ-712 | Linear photodiode array imager. Window: fused silica. 1024 active pixels. | distributor | Ceramic DIP | 20 | -25°C | 55°C | 173 K |
RL102FG | 100 V, 1 A, Glass passivated junction fast switching rectifier | distributor | - | 2 | -55°C | 150°C | 157 K |
TPS334L10.6 | Thermopile detector | distributor | - | 4 | -40°C | 100°C | 273 K |
UMIL100 | 100 W, 28 V, 225-400 MHz common emitter transistor | distributor | 55HV | 3 | - | - | 166 K |
UMIL100A | 100 W, 28 V, 225-400 MHz common emitter transistor | distributor | 55JU | 3 | - | - | 133 K |
VMIL100 | 100 W, 28 V, 100-200 MHz common emitter transistor | distributor | 55HV | 3 | - | - | 134 K |
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