Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
---|
LP61L1008AS-10 | 10ns 155mA 128K x 8bit 3.3V high speed center power CMOS SRAM | distributor | SOJ | 32 | 0°C | 70°C | 118 K |
LP61L1008AS-12 | 12ns 150mA 128K x 8bit 3.3V high speed center power CMOS SRAM | distributor | SOJ | 32 | 0°C | 70°C | 118 K |
LP61L1008AS-8 | 8ns 160mA 128K x 8bit 3.3V high speed center power CMOS SRAM | distributor | SOJ | 32 | 0°C | 70°C | 118 K |
LP61L1008S-12 | 12ns 180mA 128K x 8bit 3.3V high speed center power CMOS SRAM | distributor | SOJ | 32 | 0°C | 70°C | 142 K |
LP61L1008S-15 | 15ns 170mA 128K x 8bit 3.3V high speed center power CMOS SRAM | distributor | SOJ | 32 | 0°C | 70°C | 142 K |
LP61L1008X-12 | 12ns 180mA 128K x 8bit 3.3V high speed center power CMOS SRAM | distributor | SOJ | 32 | 0°C | 70°C | 142 K |
LP61L1008X-15 | 15ns 170mA 128K x 8bit 3.3V high speed center power CMOS SRAM | distributor | TSOP | 32 | 0°C | 70°C | 142 K |
LP61L1024S-12 | 12ns 170mA 128K x 8bit 3.3V high speed low VCC CMOS SRAM | distributor | SOJ | 32 | 0°C | 70°C | 178 K |
MMVL105GT1 | 30 V, silicon tuning diode | distributor | - | 2 | - | - | 52 K |
MMVL109T1 | 30 V, silicon epicap diode | distributor | - | 2 | -55°C | 150°C | 40 K |
<< [74] [75] [76] [77] [78] 79 [80] [81] [82] [83] [84] >> |
---|