Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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GAL16V8D-10LJ | High performance E2CMOS PLD | Lattice-Semiconductor-Corporation | PLCC | 20 | 0°C | 75°C | 316 K |
GAL16V8D-10LP | High performance E2CMOS PLD | Lattice-Semiconductor-Corporation | DIP | 20 | 0°C | 75°C | 316 K |
GAL16V8D-10LS | High performance E2CMOS PLD | Lattice-Semiconductor-Corporation | SOIC | 20 | 0°C | 75°C | 316 K |
GAL16V8D-10QJ | High performance E2CMOS PLD | Lattice-Semiconductor-Corporation | PLCC | 20 | 0°C | 75°C | 316 K |
GAL16V8D-15LJ | High performance E2CMOS PLD | Lattice-Semiconductor-Corporation | PLCC | 20 | 0°C | 75°C | 316 K |
GAL16V8D-15LP | High performance E2CMOS PLD | Lattice-Semiconductor-Corporation | DIP | 20 | 0°C | 75°C | 316 K |
GAL16V8D-15LS | High performance E2CMOS PLD | Lattice-Semiconductor-Corporation | SOIC | 20 | 0°C | 75°C | 316 K |
GAL16V8D-15QJ | High performance E2CMOS PLD | Lattice-Semiconductor-Corporation | PLCC | 20 | 0°C | 75°C | 316 K |
GAL16V8D-15QP | High performance E2CMOS PLD | Lattice-Semiconductor-Corporation | DIP | 20 | 0°C | 75°C | 316 K |
GAL16V8D-25QP | High performance E2CMOS PLD | Lattice-Semiconductor-Corporation | DIP | 20 | 0°C | 75°C | 316 K |
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