| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| GAL18V10-15LP | High performance E2CMOS PLD generic array logicTM (96 x 36), low power, 15ns | Lattice-Semiconductor-Corporation | PDIP | 20 | 0°C | 75°C | 265 K |
| GAL18V10-20LJ | High performance E2CMOS PLD generic array logicTM (96 x 36), low power, 20ns | Lattice-Semiconductor-Corporation | PLCC | 20 | 0°C | 75°C | 265 K |
| GAL18V10-20LP | High performance E2CMOS PLD generic array logicTM (96 x 36), low power, 20ns | Lattice-Semiconductor-Corporation | PDIP | 20 | 0°C | 75°C | 265 K |
| GAL18V10B-15LJ | High performance E2CMOS PLD generic array logicTM (96 x 36), low power, 15ns | Lattice-Semiconductor-Corporation | PLCC | 20 | 0°C | 75°C | 265 K |
| GAL18V10B-15LP | High performance E2CMOS PLD generic array logicTM (96 x 36), low power, 15ns | Lattice-Semiconductor-Corporation | PDIP | 20 | 0°C | 75°C | 265 K |
| GAL18V10B-20LP | High performance E2CMOS PLD generic array logicTM (96 x 36), low power, 20ns | Lattice-Semiconductor-Corporation | PDIP | 20 | 0°C | 75°C | 265 K |
| PEEL18CV8P-15 | CMOS programmable electrically erasable logic device, 15 ns | distributor | DIP | 20 | 0°C | 70°C | 397 K |
| PEEL18CV8P-25 | CMOS programmable electrically erasable logic device, 25 ns | distributor | DIP | 20 | 0°C | 70°C | 397 K |
| PEEL18CV8PI-15 | CMOS programmable electrically erasable logic device, 15 ns | distributor | DIP | 20 | -40°C | 85°C | 397 K |
| PEEL18CV8PI-25 | CMOS programmable electrically erasable logic device, 25 ns | distributor | DIP | 20 | -40°C | 85°C | 397 K |
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