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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
GAL20V8Z-12QJZero power E2CMOS PLD, 12nsLattice-Semiconductor-CorporationPLCC280°C75°C307 K
GAL20V8Z-15QJZero power E2CMOS PLD, 15nsLattice-Semiconductor-CorporationPLCC280°C75°C307 K
GAL20V8ZD-15QJZero power E2CMOS PLD, 15nsLattice-Semiconductor-CorporationPLCC280°C75°C307 K
RL201Silicon rectifier. Max recurrent peak reverse voltage 50 V. Max average forward rectified current 2.0 A.distributor-2-65°C125°C138 K
RL203Silicon rectifier. Max recurrent peak reverse voltage 200 V. Max average forward rectified current 2.0 A.distributor-2-65°C125°C138 K
RL204Silicon rectifier. Max recurrent peak reverse voltage 400 V. Max average forward rectified current 2.0 A.distributor-2-65°C125°C138 K
RL205Silicon rectifier. Max recurrent peak reverse voltage 600 V. Max average forward rectified current 2.0 A.distributor-2-65°C125°C138 K
RL206Silicon rectifier. Max recurrent peak reverse voltage 800 V. Max average forward rectified current 2.0 A.distributor-2-65°C125°C138 K
RL207Silicon rectifier. Max recurrent peak reverse voltage 1000 V. Max average forward rectified current 2.0 A.distributor-2-65°C125°C138 K
RL207GGlass passivated rectifier. Max recurrent peak reverse voltage 1000 V. Max average forward rectified current 2.0 A.distributor-2-65°C150°C128 K
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