Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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IDT707288L25G | High-speed 64K x 16 bank-switchable dual-ported SRAM with external bank selects | Integrated-Device-Technology-Inc- | PGA | 108 | 0°C | 70°C | 65 K |
IDT707288L25PF | High-speed 64K x 16 bank-switchable dual-ported SRAM with external bank selects | Integrated-Device-Technology-Inc- | TQFP | 100 | 0°C | 70°C | 65 K |
IDT72251L25J | CMOS syncFIFO 8192 x 9 | Integrated-Device-Technology-Inc- | PLCC | 32 | 0°C | 70°C | 183 K |
IDT7280L25PA | CMOS dual asynchronous FIFO dual 256 x 9, dual 512 x 9, dual 1024 x 9 | Integrated-Device-Technology-Inc- | TSSOP | 56 | 0°C | 70°C | 142 K |
ML2500 | Analog-storage single-chip record/playback LSI with 1M bit-cell flash memory | distributor | TSOP | 32 | -10°C | 70°C | 104 K |
ML2502 | Record/playback LSI with 128Kbit analog cell storage flash memory | distributor | SSOP | 30 | -10°C | 70°C | 117 K |
RE5VL25AA-RF | Voltage detector. Detector threshold 2.5V. Output type Nch open drain. Taping type RF | distributor | - | 3 | -30°C | 80°C | 300 K |
STK12C68-L25IM | CMOS nvSRAM 8K x 8 nonvolatile static RAM | distributor | PLCC | 28 | -40°C | 85°C | 61 K |
UML25F | NPN silicon RF power transistor | Advanced-Semiconductor-Inc- | - | 6 | -65°C | 200°C | 17 K |
UML25S | NPN silicon RF power transistor | Advanced-Semiconductor-Inc- | - | 4 | -65°C | 200°C | 16 K |
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