Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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A23L2616M-100 | 100ns 4M x 16 / 4M x 8 bit CMOS MASK ROM | distributor | SOP | 44 | 0°C | 70°C | 122 K |
A23L2616M-70 | 70ns 4M x 16 / 4M x 8 bit CMOS MASK ROM | distributor | SOP | 44 | 0°C | 70°C | 122 K |
A23L2616V-100 | 100ns 4M x 16 / 4M x 8 bit CMOS MASK ROM | distributor | TSOP | 48 | 0°C | 70°C | 122 K |
A42L2604V-45L | 45ns; refresh recycle:2K; 4M x 4bit CMOS dynamic RAM with EDO page mode | distributor | TSOP | 26 | 0°C | 70°C | 259 K |
A42L2604V-45LU | 45ns; refresh recycle:2K; 4M x 4bit CMOS dynamic RAM with EDO page mode | distributor | TSOP | 26 | 0°C | 70°C | 259 K |
A42L2604V-45LU | 45ns; refresh recycle:2K; 4M x 4bit CMOS dynamic RAM with EDO page mode | distributor | TSOP | 24 | 0°C | 70°C | 259 K |
A42L2604V-50LU | 50ns; refresh recycle:2K; 4M x 4bit CMOS dynamic RAM with EDO page mode | distributor | TSOP | 24 | 0°C | 70°C | 259 K |
A42L2604V-50LU | 50ns; refresh recycle:2K; 4M x 4bit CMOS dynamic RAM with EDO page mode | distributor | TSOP | 26 | 0°C | 70°C | 259 K |
A43L2616V-6PH | Cycle time:6ns; 166MHz CL=3 access time:5.0ns 1M x 16bit x 4banks synchronous DRAM | distributor | TSOP | 54 | 0°C | 70°C | 862 K |
A43L2616V-7PH | Cycle time:7ns; 143MHz CL=3 access time:5.4ns 1M x 16bit x 4banks synchronous DRAM | distributor | TSOP | 54 | 0°C | 70°C | 862 K |
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