Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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BUL45D2 | High speed, high gain bipolar NPN power transistor with integrated collector-emitter diode and built-in efficient antisaturation network | Motorola | - | 4 | -65°C | 150°C | 444 K |
DPL4519G | Sound processor for digital and analog surround systems | Micronas-Intermetall | PQFP | 80 | 0°C | 70°C | 1 M |
DPL4519G | Sound processor for digital and analog surround systems | Micronas-Intermetall | PQFP | 64 | 0°C | 70°C | 1 M |
DPL4519G | Sound processor for digital and analog surround systems | Micronas-Intermetall | PSDIP | 64 | 0°C | 70°C | 1 M |
GL454 | Bidirectional emissing type infrared emittting diode | Sharp | Epoxy resin | 2 | -25°C | 85°C | 43 K |
LL457A | Signal or Computer Diode | Microsemi-Corporation | LL35 | - | - | - | 71 K |
LL458A | Signal or Computer Diode | Microsemi-Corporation | LL35 | - | - | - | -- |
SC1437ISK-L45TR | Precision voltage detector | Semtech-Corporation | SOT | 5 | -40°C | 85°C | 93 K |
STK10C68-5L45M | CMOS nvSRAM high performance 8K x 8 nonvolatile static RAM | distributor | PLCC | 28 | -55°C | 125°C | 77 K |
STK11C68-5L45M | CMOS nvSRAM high performance 8K x 8 nonvolatile static RAM | distributor | PLCC | 28 | -55°C | 125°C | 59 K |
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