| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| BUL53B | 250V Vce, 12A Ic, 20MHz NPN bipolar transistor | Semelab-Plc- | TO220 | - | - | - | 19 K |
| BUL53BSMD | 250V Vce, 12A Ic, 20MHz NPN bipolar transistor | Semelab-Plc- | SMD1 | - | - | - | 20 K |
| GL537 | 5mm resin mold type infrared emitting diode | Sharp | Resin | 2 | -25°C | 85°C | 37 K |
| GL538 | 5mm resin mold type infrared emitting diode | Sharp | Resin | 2 | -25°C | 85°C | 37 K |
| GP1L53V | High sensing accuracy type photointerrupter | Sharp | __ | 4 | -25°C | 85°C | 48 K |
| HAL535SF-A | Hall effect sensor IC (115 kHz) | Micronas-Intermetall | - | 3 | -40°C | 170°C | 292 K |
| HAL535SF-E | Hall effect sensor IC (115 kHz) | Micronas-Intermetall | - | 3 | -40°C | 100°C | 292 K |
| HAL535SF-K | Hall effect sensor IC (115 kHz) | Micronas-Intermetall | - | 3 | -40°C | 140°C | 292 K |
| HAL535UA-E | Hall effect sensor IC (115 kHz) | Micronas-Intermetall | - | 3 | -40°C | 100°C | 292 K |
| NJL5365K | Photo reflector | New-Japan-Radio-Co--Ltd--JRC | __ | 4 | -20°C | 80°C | 209 K |
| [1] [2] 3 [4] [5] [6] [7] [8] [9] [10] |
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