| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| HAL800UT-C | Programmable hall effect sensor | Micronas-Intermetall | - | 3 | 0°C | 100°C | 347 K |
| HAL800UT-E | Programmable hall effect sensor | Micronas-Intermetall | - | 3 | -40°C | 100°C | 347 K |
| HAL800UT-K | Programmable hall effect sensor | Micronas-Intermetall | - | 3 | -40°C | 140°C | 347 K |
| HAL805UT-A | Programmable linear hall effect sensor | Micronas-Intermetall | - | 3 | -40°C | 170°C | 373 K |
| HAL805UT-E | Programmable linear hall effect sensor | Micronas-Intermetall | - | 3 | -40°C | 100°C | 373 K |
| HAL805UT-K | Programmable linear hall effect sensor | Micronas-Intermetall | - | 3 | -40°C | 140°C | 373 K |
| KM416L8031BT-FZ | 128 Mb DDR SDRAM. Version 0.61, Operating freq. 133 MHz, speed 7.5ns. | Samsung-Electronic | - | 66 | 0°C | 70°C | 750 K |
| KM416L8031BT-G0 | 128 Mb DDR SDRAM. Version 0.61, Operating freq. 100 MHz, speed 10ns. | Samsung-Electronic | - | 66 | 0°C | 70°C | 750 K |
| KM416L8031BT-GY | 128 Mb DDR SDRAM. Version 0.61, Operating freq. 133 MHz, speed 7.5 ns. | Samsung-Electronic | - | 66 | 0°C | 70°C | 750 K |
| KM416L8031BT-GZ | 128 Mb DDR SDRAM. Version 0.61, Operating freq. 133 MHz, speed 7.5 ns. | Samsung-Electronic | - | 66 | 0°C | 70°C | 750 K |
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