| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| IDT72235LB15J | CMOS syncFIFO 256 x 18, 512 x 18, 1024 x 18, 2048 x 18 and 4096 x 18 | Integrated-Device-Technology-Inc- | PLCC | 68 | 0°C | 70°C | 209 K |
| IDT72245LB15J | CMOS syncFIFO 256 x 18, 512 x 18, 1024 x 18, 2048 x 18 and 4096 x 18 | Integrated-Device-Technology-Inc- | PLCC | 68 | 0°C | 70°C | 209 K |
| ISPLSI2064VE-100LB100 | 100 MHz 3.3V in-system prommable superFAST high density PLD | Lattice-Semiconductor-Corporation | CPGA | 100 | -55°C | 125°C | 200 K |
| ISPLSI2064VE-135LB100 | 135 MHz 3.3V in-system prommable superFAST high density PLD | Lattice-Semiconductor-Corporation | CPGA | 100 | -55°C | 125°C | 200 K |
| ISPLSI2064VE-200LB100 | 280 MHz 3.3V in-system prommable superFAST high density PLD | Lattice-Semiconductor-Corporation | CPGA | 100 | -55°C | 125°C | 200 K |
| ISPLSI2064VE-280LB100 | 280 MHz 3.3V in-system prommable superFAST high density PLD | Lattice-Semiconductor-Corporation | CPGA | 100 | -55°C | 125°C | 200 K |
| ISPLSI2064VL-165LB100 | 165 MHz 2.5V in-system prommable superFAST high density PLD | Lattice-Semiconductor-Corporation | CPGA | 100 | -55°C | 125°C | 188 K |
| VLB10-12F | NPN silicon RF power transistor | Advanced-Semiconductor-Inc- | - | 4 | -65°C | 200°C | 17 K |
| VLB10-12S | NPN silicon RF power transistor | Advanced-Semiconductor-Inc- | - | 4 | -65°C | 200°C | 16 K |
| VLB100-12 | NPN silicon RF power transistor | Advanced-Semiconductor-Inc- | - | 4 | -65°C | 200°C | 18 K |
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