| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| HY628100ALG-55 | 128Kx8bit CMOS SRAM, standby current 100 uA, 55ns | distributor | SOP | 32 | 0°C | 70°C | 128 K |
| HY628100ALLG-55 | 128Kx8bit CMOS SRAM, standby current 20 uA, 55ns | distributor | SOP | 32 | 0°C | 70°C | 128 K |
| KM684000BLG-5 | 512Kx8 bit CMOS static RAM, 55ns | Samsung-Electronic | SOP | 32 | 0°C | 70°C | 171 K |
| KM684000BLG-5L | 512Kx8 bit CMOS static RAM, 55ns, low power | Samsung-Electronic | SOP | 32 | 0°C | 70°C | 171 K |
| KM684000CLG-5 | 512Kx8 bit CMOS static RAM, 55ns | Samsung-Electronic | SOP | 32 | 0°C | 70°C | 169 K |
| KM684000CLG-5L | 512Kx8 bit CMOS static RAM, 55ns, low power | Samsung-Electronic | SOP | 32 | 0°C | 70°C | 169 K |
| KM684000LG-5 | 512Kx8 bit CMOS static RAM, 55ns | Samsung-Electronic | SOP | 32 | 0°C | 70°C | 330 K |
| KM684000LG-5L | 512Kx8 bit CMOS static RAM, 55ns, low power | Samsung-Electronic | SOP | 32 | 0°C | 70°C | 330 K |
| MT46V4M32LG-5 | 1Meg x 32 x 4banks, 2.5V, CL=3, 200MHz double data rate (DDR) SDRAM | distributor | TQFP | 100 | 0°C | 70°C | 1 M |
| MT46V4M32V1LG-5 | 1Meg x 32 x 4banks, 2.5V, CL=3, 200MHz double data rate (DDR) SDRAM | distributor | TQFP | 100 | 0°C | 70°C | 1 M |
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