| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| LN145W | GaAlAs Red Light Emitting Diode | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 26 K |
| LN172 | GaAs Infrared Light Emitting Diodes | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 36 K |
| LN175 | GaAs Infrared Light Emitting Diodes | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 42 K |
| LN1VB60 | General purpose low noise bridge rectifier | Shindengen-Electric-Manufacturing-Company-Ltd- | 1V | - | - | - | 304 K |
| LN1WBA60 | General purpose low noise bridge rectifier | Shindengen-Electric-Manufacturing-Company-Ltd- | 1W | - | - | - | 308 K |
| MLN1027F | NPN silicon RF power transistor | Advanced-Semiconductor-Inc- | - | 2 | -65°C | 200°C | 17 K |
| MLN1027S | NPN silicon RF power transistor | Advanced-Semiconductor-Inc- | - | 4 | -65°C | 200°C | 16 K |
| MLN1027SL | NPN silicon RF power transistor | Advanced-Semiconductor-Inc- | - | 4 | -65°C | 200°C | 16 K |
| MLN1027SS | NPN silicon RF power transistor | Advanced-Semiconductor-Inc- | - | 4 | -65°C | 200°C | 17 K |
| MLN1030F | NPN silicon RF power transistor | Advanced-Semiconductor-Inc- | - | 2 | -65°C | 200°C | 17 K |
| [1] 2 [3] [4] |
|---|
