Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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MLN1030S | NPN silicon RF power transistor | Advanced-Semiconductor-Inc- | - | 4 | -65°C | 200°C | 18 K |
MLN1030SL | NPN silicon RF power transistor | Advanced-Semiconductor-Inc- | - | 4 | -65°C | 200°C | 16 K |
MLN1030SS | NPN silicon RF power transistor | Advanced-Semiconductor-Inc- | - | 4 | -65°C | 200°C | 17 K |
MLN1033F | NPN silicon RF power transistor | Advanced-Semiconductor-Inc- | - | 2 | -65°C | 200°C | 17 K |
MLN1033S | NPN silicon RF power transistor | Advanced-Semiconductor-Inc- | - | 4 | -65°C | 200°C | 18 K |
MLN1037F | NPN silicon RF power transistor | Advanced-Semiconductor-Inc- | - | 2 | -65°C | 200°C | 18 K |
MLN1037S | NPN silicon RF power transistor | Advanced-Semiconductor-Inc- | - | 4 | -65°C | 200°C | 18 K |
MX7672LN10 | High-speed 12-bit A/D converter with external reference input. Fast conversion time 10 microsec. Linearity +-1/2 LSB. | Maxim-Integrated-Producs | Plastic DIP | 24 | 0°C | 70°C | 506 K |
ST62P25LN1/XXX | 8-bit MCU with 8-bit A/D converter, two timers, oscillator safeguard & safe reset, 64 b RAM, 4Kb ROM, 8MHz, low voltage | SGS-Thomson-Microelectronics | SSOP | 28 | 0°C | 70°C | -- |
VI-LN1-XX | InputV:48V; outputV:12V; 50-200W; 10-40A; single, dual and triple output DC-DC converter to applications that might otherwise require a custom supply | distributor | - | - | - | - | 154 K |
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