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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
MLN1030SNPN silicon RF power transistorAdvanced-Semiconductor-Inc--4-65°C200°C18 K
MLN1030SLNPN silicon RF power transistorAdvanced-Semiconductor-Inc--4-65°C200°C16 K
MLN1030SSNPN silicon RF power transistorAdvanced-Semiconductor-Inc--4-65°C200°C17 K
MLN1033FNPN silicon RF power transistorAdvanced-Semiconductor-Inc--2-65°C200°C17 K
MLN1033SNPN silicon RF power transistorAdvanced-Semiconductor-Inc--4-65°C200°C18 K
MLN1037FNPN silicon RF power transistorAdvanced-Semiconductor-Inc--2-65°C200°C18 K
MLN1037SNPN silicon RF power transistorAdvanced-Semiconductor-Inc--4-65°C200°C18 K
MX7672LN10High-speed 12-bit A/D converter with external reference input. Fast conversion time 10 microsec. Linearity +-1/2 LSB.Maxim-Integrated-ProducsPlastic DIP240°C70°C506 K
ST62P25LN1/XXX8-bit MCU with 8-bit A/D converter, two timers, oscillator safeguard & safe reset, 64 b RAM, 4Kb ROM, 8MHz, low voltageSGS-Thomson-MicroelectronicsSSOP280°C70°C--
VI-LN1-XXInputV:48V; outputV:12V; 50-200W; 10-40A; single, dual and triple output DC-DC converter to applications that might otherwise require a custom supplydistributor----154 K
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