| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| GM71C17403CLT-5 | CMOS DRAM 4,194,304 words x 4 bit, 5.0V, 50ns, low power | distributor | TSOP II | 24 | 0°C | 70°C | 97 K |
| GM71C17800CLT-5 | CMOS DRAM 2,097,152 words x 8 bit, 5.0V, 50ns, low power | distributor | TSOP II | 28 | 0°C | 70°C | 92 K |
| GM71CS17403CLT-5 | CMOS DRAM 4,194,304 words x 4 bit, 5.0V, 50ns, low power | distributor | TSOP II | 24 | 0°C | 70°C | 97 K |
| GM71CS17800CLT-5 | CMOS DRAM 2,097,152 words x 8 bit, 5.0V, 50ns, low power | distributor | TSOP II | 28 | 0°C | 70°C | 92 K |
| HY51V18163HGLT-5 | Dynamic RAM organized 1,048,576 words x 16bit, 50ns, low power | distributor | TSOP II | 44 | 0°C | 70°C | 107 K |
| HY51VS18163HGLT-5 | Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 50ns, low power | distributor | TSOP II | 44 | 0°C | 70°C | 107 K |
| HY57V641620HGLT-55 | 4 banks x 1M x 16Bit synchronous DRAM, 3.3V, LVTTL, low power, 183 MHz | distributor | TSOP II | 54 | 0°C | 70°C | 86 K |
| KM416C256DLT-5 | 256K x 16Bit CMOS dynamic RAM with fast page mode, 50ns, 5V, self-refresh capability | Samsung-Electronic | TSOP II | 40 | 0°C | 70°C | 83 K |
| KM416V256DLT-5 | 256K x 16Bit CMOS dynamic RAM with fast page mode, 50ns, 3.3V, self-refresh capability | Samsung-Electronic | TSOP II | 40 | 0°C | 70°C | 83 K |
| KM41C4000DLT-5 | 4M x 1Bit CMOS dynamic RAM with fast page mode, 5V, 128ms refresh, 50ns | Samsung-Electronic | TSOP II | 20 | 0°C | 70°C | 340 K |
| [1] 2 [3] [4] [5] |
|---|
