Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
---|
28LV256PI-3 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. | distributor | PDIP | 28 | -40°C | 85°C | 41 K |
28LV256PI-4 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. | distributor | PDIP | 28 | -40°C | 85°C | 41 K |
28LV256PI-5 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns. | distributor | PDIP | 28 | -40°C | 85°C | 41 K |
28LV256PI-6 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns. | distributor | PDIP | 28 | -40°C | 85°C | 41 K |
28LV256PM-3 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. | distributor | PDIP | 28 | -55°C | 125°C | 41 K |
28LV256PM-4 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. | distributor | PDIP | 28 | -55°C | 125°C | 41 K |
28LV256PM-5 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns. | distributor | PDIP | 28 | -55°C | 125°C | 41 K |
28LV256PM-6 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns. | distributor | PDIP | 28 | -55°C | 125°C | 41 K |
28LV256SC-3 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. | distributor | SOIC | 28 | 0°C | 70°C | 41 K |
28LV256SC-4 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. | distributor | SOIC | 28 | 0°C | 70°C | 41 K |
<< [30] [31] [32] [33] [34] 35 [36] [37] [38] [39] [40] >> |
---|