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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
CM1000HA-24H1000 Amp IGBT module for high power switching use insulated typeMitsubishi-Electric-Corporation-Semiconductor-Group-4-40°C150°C49 K
CM1000HA-28H1000 Amp IGBT module for high power switching use insulated typeMitsubishi-Electric-Corporation-Semiconductor-Group-4-40°C150°C54 K
CM1000HA-28H1000 Amp IGBT module for high power switching use insulated typeMitsubishi-Electric-Corporation-Semiconductor-Group-4-40°C150°C54 K
CM100BU-12H100 Amp IGBT module for high power switching use insolated typeMitsubishi-Electric-Corporation-Semiconductor-Group-4-40°C150°C47 K
CM100DU-12H100 Amp IGBT module for high power switching use insolated typeMitsubishi-Electric-Corporation-Semiconductor-Group-7-40°C150°C51 K
CM100DU-24H100 Amp IGBT module for high power switching use insolated typeMitsubishi-Electric-Corporation-Semiconductor-Group-7-40°C150°C45 K
CM100E3U-12H100 Amp IGBT module for high power switching use insulated typeMitsubishi-Electric-Corporation-Semiconductor-Group-3-40°C150°C50 K
CM100E3U-24H100 Amp IGBT module for high power switching use insolated typeMitsubishi-Electric-Corporation-Semiconductor-Group-5-40°C150°C44 K
CM100TU-12H100 Amp IGBT module for high power switching use insulated typeMitsubishi-Electric-Corporation-Semiconductor-Group-15-40°C150°C56 K
CM100TU-24H100 Amp IGBT module for high power switching use insulated typeMitsubishi-Electric-Corporation-Semiconductor-Group-15-40°C150°C50 K
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