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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
CM100DY-12H100 Amp IGBT module for high power switching use insulated typeMitsubishi-Electric-Corporation-Semiconductor-Group-7-40°C150°C47 K
CM100DY-24H100 Amp IGBT module for high power switching use insulated typeMitsubishi-Electric-Corporation-Semiconductor-Group-7-40°C150°C48 K
CM100TF-12H100 Amp IGBT module for high power switching use insulated typeMitsubishi-Electric-Corporation-Semiconductor-Group-19-40°C150°C56 K
CM100TF-24H100 Amp IGBT module for high power switching use insulated typeMitsubishi-Electric-Corporation-Semiconductor-Group-19-40°C150°C53 K
CM100TF-28H100 Amp IGBT module for high power switching use insulated typeMitsubishi-Electric-Corporation-Semiconductor-Group-19-40°C150°C53 K
PM100CSJ060100 Amp intelligent power module for flat-base type insulated packageMitsubishi-Electric-Corporation-Semiconductor-Group-25-20°C150°C71 K
PM100CVA060100 Amp intelligent power module for flat-base type insulated packageMitsubishi-Electric-Corporation-Semiconductor-Group-25-20°C150°C61 K
PM100CVA120100 Amp intelligent power module for flat-base type insulated packageMitsubishi-Electric-Corporation-Semiconductor-Group-25-20°C150°C61 K
PM10CSJ06010 Amp intelligent power module for flat-base type insulated packageMitsubishi-Electric-Corporation-Semiconductor-Group-23-20°C150°C57 K
PM10CZF12010 Amp intelligent power module for flat-base type insulated packageMitsubishi-Electric-Corporation-Semiconductor-Group-20-20°C150°C62 K
<< [32] [33] [34] [35] [36] 37 [38] [39] [40] [41] [42] >>


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