| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| CM10MD-12H | 10A IGBT module for medium power switching use, insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 21 | -40°C | 150°C | 158 K |
| CM10MD-24H | 10A IGBT module for medium power switching use, insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 21 | -40°C | 150°C | 164 K |
| CM10MD1-12H | 10A IGBT module for medium power switching use, flat-base type, insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 21 | -40°C | 150°C | 144 K |
| CM10MD3-12H | 10A IGBT module for medium power switching use, flat-base type, insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 11 | -40°C | 150°C | 377 K |
| PM100CSA120 | 100 Amp intelligent power module for flat-base type insulated package | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 25 | -20°C | 150°C | 72 K |
| PM100DSA120 | 100 Amp intelligent power module for flat-base type insulated package | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 13 | -20°C | 150°C | 62 K |
| PM100RSA060 | 100 Amp intelligent power module for flat-base type insulated package | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 25 | -20°C | 150°C | 85 K |
| PM10RSH120 | 10 Amp intelligent power module for flat-base type insulated package | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 25 | -20°C | 150°C | 81 K |
| RM10TN-2H | Three- phase diode bridge module | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 5 | -40°C | 125°C | 27 K |
| RM10TN-H | Three- phase diode bridge module | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 5 | -40°C | 125°C | 28 K |
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