| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| AM100 | Silicon miniature single-phase bridge. Max recurrent peak reverse voltage 50 V. Max average forward current 1.0 A. | distributor | AM | 4 | -55°C | 125°C | 42 K |
| AM101 | Silicon miniature single-phase bridge. Max recurrent peak reverse voltage 100 V. Max average forward current 1.0 A. | distributor | AM | 4 | -55°C | 125°C | 42 K |
| AM102 | Silicon miniature single-phase bridge. Max recurrent peak reverse voltage 200 V. Max average forward current 1.0 A. | distributor | AM | 4 | -55°C | 125°C | 42 K |
| AM104 | Silicon miniature single-phase bridge. Max recurrent peak reverse voltage 400 V. Max average forward current 1.0 A. | distributor | AM | 4 | -55°C | 125°C | 42 K |
| AM106 | Silicon miniature single-phase bridge. Max recurrent peak reverse voltage 600 V. Max average forward current 1.0 A. | distributor | AM | 4 | -55°C | 125°C | 42 K |
| IXFM10N100 | 1000V HiPerFET power MOSFET | distributor | - | 4 | -55°C | 150°C | 232 K |
| IXTM10N100 | 1000V HiPerFET power MOSFET | distributor | - | 4 | -55°C | 150°C | 106 K |
| RM10A | 600 V, 1.2 A, silicon rectifier diode | distributor | D2 | 2 | -65°C | 175°C | 39 K |
| RM10B | 800 V, 1.2 A, silicon rectifier diode | distributor | D2 | 2 | -65°C | 175°C | 39 K |
| RM10Z | 200 V, 1.5 A, silicon rectifier diode | distributor | D2 | 2 | -65°C | 175°C | 39 K |
| << [52] [53] [54] [55] [56] 57 [58] [59] [60] [61] [62] >> |
|---|
