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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
CM150DU-24F150A IGBT module for high power switching useMitsubishi-Electric-Corporation-Semiconductor-Group-4-40°C150°C73 K
CM150TU-12F150A IGBT module for high power switching useMitsubishi-Electric-Corporation-Semiconductor-Group-17-40°C150°C81 K
CM150TU-12F150A IGBT module for high power switching useMitsubishi-Electric-Corporation-Semiconductor-Group-17-40°C150°C81 K
CM15MD-24H15A IGBT module for medium power switching use, insulated typeMitsubishi-Electric-Corporation-Semiconductor-Group-21-40°C150°C154 K
CM15MD1-12H15A IGBT module for medium power switching use, flat-base type, insulated typeMitsubishi-Electric-Corporation-Semiconductor-Group-11-40°C150°C155 K
CM15MD3-12H15A IGBT module for medium power switching use, flat-base type, insulated typeMitsubishi-Electric-Corporation-Semiconductor-Group-11-40°C150°C164 K
PM15CTM06015A intelligent power module for flat-base typeMitsubishi-Electric-Corporation-Semiconductor-GroupInsulated package20-20°C100°C136 K
PM15CTM060-315A intelligent power module for flat-base typeMitsubishi-Electric-Corporation-Semiconductor-GroupInsulated package20-20°C125°C139 K
QM150HY-H150A - transistor module for medium power switching use, insulated typeMitsubishi-Electric-Corporation-Semiconductor-Group-5-40°C150°C79 K
QM15HA-H15A - transistor module for medium power switching use, insulated typeMitsubishi-Electric-Corporation-Semiconductor-Group-3-40°C150°C62 K
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