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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
AS4LC1M16E5-60TC3V 1M x 16 CM0S DRAM (EDO), 60ns RAS access timeAlliance-Semiconductor-Corporationplastic TSOPII440°C70°C604 K
AS4LC1M16E5-60TI3V 1M x 16 CM0S DRAM (EDO), 60ns RAS access timeAlliance-Semiconductor-Corporationplastic TSOPII44-40°C85°C604 K
AS4LC1M16S1-10TC3.3V 1M x 16 CMOS synchronous DRAM, 1/frequency - 10 nsAlliance-Semiconductor-CorporationTSOPII500°C70°C712 K
AS4LC1M16S1-12TC3.3V 1M x 16 CMOS synchronous DRAM, 1/frequency - 12 nsAlliance-Semiconductor-CorporationTSOPII500°C70°C712 K
AS4LC1M16S1-8TC3.3V 1M x 16 CMOS synchronous DRAM, 1/frequency - 8 nsAlliance-Semiconductor-CorporationTSOPII500°C70°C712 K
AS4LC4M16S0-10FTC3.3V 4M x 16 CMOS synchronous DRAMAlliance-Semiconductor-CorporationTSOPII540°C70°C566 K
AS4LC4M16S0-10TC3.3V 4M x 16 CMOS synchronous DRAMAlliance-Semiconductor-CorporationTSOPII540°C70°C566 K
AS4LC4M16S0-75TC3.3V 4M x 16 CMOS synchronous DRAMAlliance-Semiconductor-CorporationTSOPII540°C70°C566 K
AS4LC4M16S0-8TC3.3V 4M x 16 CMOS synchronous DRAMAlliance-Semiconductor-CorporationTSOPII540°C70°C566 K
FM1608-120-P64 Kb bytewide FRAM memory. 120 ns accessdistributorplastic DIP28-40°C85°C104 K
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