Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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FAR-M2SC-16M934-D117 | Voltage controlled oscillator (4 to 30MHz) | Fujitsu-Microelectronis | SIP | 10 | -10°C | 60°C | 38 K |
FAR-M2SC-16M934-D118 | Voltage controlled oscillator (4 to 30MHz) | Fujitsu-Microelectronis | SIP | 10 | -10°C | 60°C | 38 K |
FAR-M2SC-16M934-D119 | Voltage controlled oscillator (4 to 30MHz) | Fujitsu-Microelectronis | SIP | 10 | -10°C | 60°C | 38 K |
M2S28D20ATP | 128M double data rate synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 66 | 0°C | 70°C | 1 M |
M2S28D30ATP | 128M double data rate synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 66 | 0°C | 70°C | 1 M |
M2S28D40ATP | 128M double data rate synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 66 | 0°C | 70°C | 1 M |
M2S56D20ATP | 256M double data rate synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 66 | 0°C | 70°C | 824 K |
M2S56D20TP | 256M double data rate synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 66 | 0°C | 70°C | 259 K |
M2S56D30ATP | 256M double data rate synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 66 | 0°C | 70°C | 824 K |
M2S56D30TP | 256M double data rate synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 66 | 0°C | 70°C | 259 K |
[1] [2] [3] [4] 5 [6] [7] [8] [9] [10] |
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