| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| APM4800KC-TR | 30 V, N-channel enhancement mode MOSFET | distributor | - | 8 | -55°C | 150°C | 148 K |
| APM4800KC-TU | 30 V, N-channel enhancement mode MOSFET | distributor | - | 8 | -55°C | 150°C | 148 K |
| LM4809LDX | LM4809 Dual 105mW Headphone Amplifier with Active-Low Shutdown Mode | distributor | LLP | 8 | -40°C | 85°C | 903 K |
| LM4809MA | LM4809 Dual 105mW Headphone Amplifier with Active-Low Shutdown Mode | distributor | SOIC NARROW | 8 | -40°C | 85°C | 903 K |
| LM4809MAX | LM4809 Dual 105mW Headphone Amplifier with Active-Low Shutdown Mode | distributor | SOIC NARROW | 8 | -40°C | 85°C | 903 K |
| LM4809MDC | LM4809 Dual 105mW Headphone Amplifier with Active-Low Shutdown Mode | distributor | Unpackaged Die | - | -40°C | 85°C | 903 K |
| LM4809MWC | LM4809 Dual 105mW Headphone Amplifier with Active-Low Shutdown Mode | distributor | Wafer | - | -40°C | 85°C | 903 K |
| LM4809MWC | LM4809 Dual 105mW Headphone Amplifier with Active-Low Shutdown Mode | distributor | Wafer | - | -40°C | 85°C | 903 K |
| SDM4800 | 30V; 9A; N-channel enchanced mode field effect transistor | distributor | Surface mount | 8 | -55°C | 150°C | 386 K |
| [1] 2 |
|---|
