Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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CM50DU-24H | 50 Amp IGBT module for high power switching use insolated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 7 | -40°C | 150°C | 51 K |
CM50E3U-24H | 50 Amp IGBT module for high power switching use insolated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 5 | -40°C | 150°C | 50 K |
EM513 | 1.0A silicon rectifier | distributor | - | 2 | -65°C | 175°C | 377 K |
EM516 | 1.0A silicon rectifier | distributor | - | 2 | -65°C | 175°C | 377 K |
EM520 | 1.0A silicon rectifier | distributor | - | 2 | -65°C | 175°C | 377 K |
M57957L | Hybrid IC for driving IGBT modules | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 6 | -20°C | 60°C | 29 K |
M57958L | Hybrid IC for driving IGBT modules | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 6 | -20°C | 70°C | 31 K |
SM5817 | 1.0 mA surface mount schottky barrier rectifier | distributor | - | 2 | -65°C | 125°C | 399 K |
SM5818 | 1.0 mA surface mount schottky barrier rectifier | distributor | - | 2 | -65°C | 125°C | 399 K |
SM5819 | 1.0 mA surface mount schottky barrier rectifier | distributor | - | 2 | -65°C | 125°C | 399 K |
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