| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| CM50MD-12H | 50A IGBT module for medium power switching use, insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 21 | -40°C | 150°C | 149 K |
| CM50MD1-12H | 50A IGBT module for medium power switching use, flat-base type, insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 11 | -40°C | 150°C | 127 K |
| CM50TF-28H | 50 Amp IGBT module for high power switching use insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 19 | -40°C | 150°C | 57 K |
| CM50TU-24F | 50A IGBT module for high power switching use | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 17 | -40°C | 150°C | 81 K |
| M5238AL | Dual low-noise J-FET operational amplifier | Mitsubishi-Electric-Corporation-Semiconductor-Group | SIP | 8 | -20°C | 75°C | 144 K |
| PM50RSA060 | 50 Amp intelligent power module for flat-base type insulated package | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 25 | -20°C | 150°C | 85 K |
| PM50RSA120 | 50 Amp intelligent power module for flat-base type insulated package | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 25 | -20°C | 150°C | 84 K |
| PM50RSK060 | 30 Amp intelligent power module for flat-base type insulated package | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 25 | -20°C | 150°C | 81 K |
| PM50RVA120 | 50 Amp intelligent power module for flat-base type insulated package | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 25 | -20°C | 150°C | 72 K |
| RM50HG-12S | 50 Amp fast recovery diode module for high switching use, non-insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 3 | -40°C | 150°C | 25 K |
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