| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| M5M4V4S40CTP-12 | 4M (2-bank x 131072-word x 16-bit) synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 50 | 0°C | 70°C | 1 M |
| M5M4V4S40CTP-15 | 4M (2-bank x 131072-word x 16-bit) synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 50 | 0°C | 70°C | 1 M |
| QM50E2Y-2H | 50A - transistor module for medium power switching use, insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 5 | -40°C | 150°C | 91 K |
| QM50E2Y-H | 50A - transistor module for medium power switching use, insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 5 | -40°C | 150°C | 89 K |
| QM50E3Y-2H | 50A - transistor module for medium power switching use, insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 5 | -40°C | 150°C | 91 K |
| QM50E3Y-H | 50A - transistor module for medium power switching use, insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 5 | -40°C | 150°C | 89 K |
| QM50HA-H | 50A - transistor module for medium power switching use, insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 3 | -40°C | 150°C | 61 K |
| QM50HA-HB | 50A - transistor module for medium power switching use, insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 3 | -40°C | 150°C | 77 K |
| QM50HY-2H | 50A - transistor module for medium power switching use, insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 5 | -40°C | 150°C | 68 K |
| QM5HG-24 | 5A - transistor module for medium power switching use, non-insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 3 | -40°C | 150°C | 44 K |
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