| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| M5M4V16169DTP-7 | 16M (1M-word by 16-bit) cached DRAM with 16K (1024-word by 16-bit) SRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 70 | - | - | 737 K |
| M5M5V416BWG-10HI | 4194304-bit (262144-word by 16-bit) CMOS static RAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 48 | -40°C | 85°C | 107 K |
| M5M5V416BWG-10HI | 4194304-bit (262144-word by 16-bit) CMOS static RAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 48 | -40°C | 85°C | 107 K |
| M5M5V416BWG-10LI | 4194304-bit (262144-word by 16-bit) CMOS static RAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 48 | -40°C | 85°C | 107 K |
| M5M5V416BWG-10LI | 4194304-bit (262144-word by 16-bit) CMOS static RAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 48 | -40°C | 85°C | 107 K |
| M5M5V416BWG-70HI | 4194304-bit (262144-word by 16-bit) CMOS static RAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 48 | -40°C | 85°C | 107 K |
| M5M5V416BWG-85HI | 4194304-bit (262144-word by 16-bit) CMOS static RAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 48 | -40°C | 85°C | 107 K |
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