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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
M5M4V16169DRT-1016M (1M-word by 16-bit) cached DRAM with 16K (1024-word by 16-bit) SRAMMitsubishi-Electric-Corporation-Semiconductor-GroupTSOP70--737 K
M5M4V16169DRT-1516M (1M-word by 16-bit) cached DRAM with 16K (1024-word by 16-bit) SRAMMitsubishi-Electric-Corporation-Semiconductor-GroupTSOP70--737 K
M5M4V16169DRT-816M (1M-word by 16-bit) cached DRAM with 16K (1024-word by 16-bit) SRAMMitsubishi-Electric-Corporation-Semiconductor-GroupTSOP70--737 K
M5M4V16169DTP-1016M (1M-word by 16-bit) cached DRAM with 16K (1024-word by 16-bit) SRAMMitsubishi-Electric-Corporation-Semiconductor-GroupTSOP70--737 K
M5M4V16169DTP-1516M (1M-word by 16-bit) cached DRAM with 16K (1024-word by 16-bit) SRAMMitsubishi-Electric-Corporation-Semiconductor-GroupTSOP70--737 K
M5M5T5636UG-2018874368-bit (524288-word by 36-bit) network SRAMMitsubishi-Electric-Corporation-Semiconductor-Group--0°C70°C287 K
M5M5T5636UG-2218874368-bit (524288-word by 36-bit) network SRAMMitsubishi-Electric-Corporation-Semiconductor-Group--0°C70°C287 K
M5M5T5636UG-2518874368-bit (524288-word by 36-bit) network SRAMMitsubishi-Electric-Corporation-Semiconductor-Group--0°C70°C287 K
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