| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| PM50CBS060 | 600V, 50A six pac IGBT module | distributor | - | - | - | - | 94 K |
| PM50CSD060 | 600V, 50A six pac IGBT module | distributor | - | - | - | - | 83 K |
| PM50CSJ060 | 50Amp - intelligent power modules | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | - | - | - | 925 K |
| PM50CTK060 | 50A intelligent power module for flat-base type | Mitsubishi-Electric-Corporation-Semiconductor-Group | Insulated package | 25 | -20°C | 150°C | 144 K |
| QM50CY-H | 50A - transistor module for medium power switching use, insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 7 | -40°C | 150°C | 72 K |
| RM50C1A-XXF | 50A - transistor module for high speed switching use, insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 3 | -40°C | 150°C | 48 K |
| RM50C1A-XXS | 50A - transistor module for medium power, high frequency use, insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 3 | -40°C | 150°C | 48 K |
| RM50CA-XXF | 50A - transistor module for high speed switching use, insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 3 | -40°C | 150°C | 48 K |
| RM50CA-XXS | 50A - transistor module for medium power, high frequency use, insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 3 | -40°C | 150°C | 48 K |
| SMJ320C40KGDM50C | FLOATING-POINT DIGITAL SIGNAL PROCESSORS, MILITARY KNOWN GOOD DIE | Texas-Instruments | KGD | - | -55°C | 125°C | 180 K |
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