| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| CM50DU-24H | 50 Amp IGBT module for high power switching use insolated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 7 | -40°C | 150°C | 51 K |
| CM50DY-12H | 50 Amp IGBT module for high power switching use insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 7 | -40°C | 150°C | 48 K |
| CM50DY-24H | 50 Amp IGBT module for high power switching use insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 7 | -40°C | 150°C | 48 K |
| CM50DY-28H | 50 Amp IGBT module for high power switching use insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 7 | -40°C | 150°C | 48 K |
| QM50DY-24 | 50A - transistor module for medium power switching use, insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 7 | -40°C | 150°C | 83 K |
| QM50DY-24B | 50A - transistor module for medium power switching use, insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 7 | -40°C | 150°C | 78 K |
| QM50DY-2H | 50A - transistor module for medium power switching use, insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 7 | -40°C | 150°C | 70 K |
| QM50DY-H | 50A - transistor module for medium power switching use, insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 7 | -40°C | 150°C | 70 K |
| QM50DY-HB | 50A - transistor module for medium power switching use, insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 7 | -40°C | 150°C | 74 K |
| RM50D2Z-40 | 50A - transistor module for medium power general use, insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 3 | -40°C | 150°C | 44 K |
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