Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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M5M29GB160BWG | 16777216-bit CMOS 3.3V-only, block erase flash memory | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 48 | -20°C | 85°C | 197 K |
M5M29GB161BWG | 16777216-bit CMOS 3.3V-only, block erase flash memory | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 48 | -20°C | 85°C | 197 K |
M5M29GT160BVP-80 | 16777216-bit CMOS 3.3V-only, block erase flash memory | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 48 | -20°C | 85°C | 229 K |
M5M29GT160BWG | 16777216-bit CMOS 3.3V-only, block erase flash memory | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 48 | -20°C | 85°C | 197 K |
M5M29GT160BWG | 16777216-bit CMOS 3.3V-only, block erase flash memory | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 48 | -20°C | 85°C | 197 K |
M5M29GT161BVP-80 | 16777216-bit CMOS 3.3V-only, block erase flash memory | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 48 | -20°C | 85°C | 229 K |
M5M417400TP-5 | 16777216-bit (4194304-word by 4-bit) dynamic RAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | SOJ | 26 | 0°C | 70°C | 657 K |
M5M417400TP-6 | 16777216-bit (4194304-word by 4-bit) dynamic RAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | SOJ | 26 | 0°C | 70°C | 657 K |
M5M417400TP-7 | 16777216-bit (4194304-word by 4-bit) dynamic RAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | SOJ | 26 | 0°C | 70°C | 657 K |
M5M417400TP-7S | 16777216-bit (4194304-word by 4-bit) dynamic RAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | SOJ | 26 | 0°C | 70°C | 657 K |
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