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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
M5M29GB160BWG16777216-bit CMOS 3.3V-only, block erase flash memoryMitsubishi-Electric-Corporation-Semiconductor-Group-48-20°C85°C197 K
M5M29GB161BWG16777216-bit CMOS 3.3V-only, block erase flash memoryMitsubishi-Electric-Corporation-Semiconductor-Group-48-20°C85°C197 K
M5M29GT160BVP-8016777216-bit CMOS 3.3V-only, block erase flash memoryMitsubishi-Electric-Corporation-Semiconductor-GroupTSOP48-20°C85°C229 K
M5M29GT160BWG16777216-bit CMOS 3.3V-only, block erase flash memoryMitsubishi-Electric-Corporation-Semiconductor-Group-48-20°C85°C197 K
M5M29GT160BWG16777216-bit CMOS 3.3V-only, block erase flash memoryMitsubishi-Electric-Corporation-Semiconductor-Group-48-20°C85°C197 K
M5M29GT161BVP-8016777216-bit CMOS 3.3V-only, block erase flash memoryMitsubishi-Electric-Corporation-Semiconductor-GroupTSOP48-20°C85°C229 K
M5M417400TP-516777216-bit (4194304-word by 4-bit) dynamic RAMMitsubishi-Electric-Corporation-Semiconductor-GroupSOJ260°C70°C657 K
M5M417400TP-616777216-bit (4194304-word by 4-bit) dynamic RAMMitsubishi-Electric-Corporation-Semiconductor-GroupSOJ260°C70°C657 K
M5M417400TP-716777216-bit (4194304-word by 4-bit) dynamic RAMMitsubishi-Electric-Corporation-Semiconductor-GroupSOJ260°C70°C657 K
M5M417400TP-7S16777216-bit (4194304-word by 4-bit) dynamic RAMMitsubishi-Electric-Corporation-Semiconductor-GroupSOJ260°C70°C657 K
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