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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
M5M29GB160BVP16777216-bit CMOS 3.3V-only, block erase flash memoryMitsubishi-Electric-Corporation-Semiconductor-GroupTSOP48-20°C85°C197 K
M5M29GB161BVP16777216-bit CMOS 3.3V-only, block erase flash memoryMitsubishi-Electric-Corporation-Semiconductor-GroupTSOP48-20°C85°C197 K
M5M29GT160BVP16777216-bit CMOS 3.3V-only, block erase flash memoryMitsubishi-Electric-Corporation-Semiconductor-GroupTSOP48-20°C85°C197 K
M5M29GT161BVP16777216-bit CMOS 3.3V-only, block erase flash memoryMitsubishi-Electric-Corporation-Semiconductor-GroupTSOP48-20°C85°C197 K
M5M29GT161BWG16777216-bit CMOS 3.3V-only, block erase flash memoryMitsubishi-Electric-Corporation-Semiconductor-Group-48-20°C85°C197 K
M5M4V16G50DFP-1016M synchronous graphics RAMMitsubishi-Electric-Corporation-Semiconductor-GroupQFP1000°C70°C167 K
M5M4V16G50DFP-1216M synchronous graphics RAMMitsubishi-Electric-Corporation-Semiconductor-GroupQFP1000°C70°C167 K
M5M4V16G50DFP-816M synchronous graphics RAMMitsubishi-Electric-Corporation-Semiconductor-GroupQFP1000°C70°C167 K
M5M4V4265CJ-5EDO mode 4194304-bit dynamic RAMMitsubishi-Electric-Corporation-Semiconductor-GroupSOJ40-20°C85°C311 K
M5M4V64S20ATP-1264M (4-bank x 4194304-word x 4-bit) synchronous DRAMMitsubishi-Electric-Corporation-Semiconductor-GroupTSOP540°C70°C1 M
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