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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
M5M4V16169DTP-1016M (1M-word by 16-bit) cached DRAM with 16K (1024-word by 16-bit) SRAMMitsubishi-Electric-Corporation-Semiconductor-GroupTSOP70--737 K
M5M4V16169DTP-1516M (1M-word by 16-bit) cached DRAM with 16K (1024-word by 16-bit) SRAMMitsubishi-Electric-Corporation-Semiconductor-GroupTSOP70--737 K
M5M4V16169DTP-716M (1M-word by 16-bit) cached DRAM with 16K (1024-word by 16-bit) SRAMMitsubishi-Electric-Corporation-Semiconductor-GroupTSOP70--737 K
M5M5V416BWG-10HI4194304-bit (262144-word by 16-bit) CMOS static RAMMitsubishi-Electric-Corporation-Semiconductor-Group-48-40°C85°C107 K
M5M5V416BWG-10HI4194304-bit (262144-word by 16-bit) CMOS static RAMMitsubishi-Electric-Corporation-Semiconductor-Group-48-40°C85°C107 K
M5M5V416BWG-10LI4194304-bit (262144-word by 16-bit) CMOS static RAMMitsubishi-Electric-Corporation-Semiconductor-Group-48-40°C85°C107 K
M5M5V416BWG-10LI4194304-bit (262144-word by 16-bit) CMOS static RAMMitsubishi-Electric-Corporation-Semiconductor-Group-48-40°C85°C107 K
M5M5V416BWG-70HI4194304-bit (262144-word by 16-bit) CMOS static RAMMitsubishi-Electric-Corporation-Semiconductor-Group-48-40°C85°C107 K
M5M5V416BWG-85HI4194304-bit (262144-word by 16-bit) CMOS static RAMMitsubishi-Electric-Corporation-Semiconductor-Group-48-40°C85°C107 K
M5M5V416BWG-85LI4194304-bit (262144-word by 16-bit) CMOS static RAMMitsubishi-Electric-Corporation-Semiconductor-Group-48-40°C85°C107 K
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