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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
M5M4V16169DRT-1016M (1M-word by 16-bit) cached DRAM with 16K (1024-word by 16-bit) SRAMMitsubishi-Electric-Corporation-Semiconductor-GroupTSOP70--737 K
M5M4V16169DRT-1516M (1M-word by 16-bit) cached DRAM with 16K (1024-word by 16-bit) SRAMMitsubishi-Electric-Corporation-Semiconductor-GroupTSOP70--737 K
M5M4V16169DRT-816M (1M-word by 16-bit) cached DRAM with 16K (1024-word by 16-bit) SRAMMitsubishi-Electric-Corporation-Semiconductor-GroupTSOP70--737 K
M5M51008DFP-55H1048576-bit (131072-word by 8-bit) SMOS static RAMMitsubishi-Electric-Corporation-Semiconductor-GroupSOP320°C70°C61 K
M5M5T5636UG-2018874368-bit (524288-word by 36-bit) network SRAMMitsubishi-Electric-Corporation-Semiconductor-Group--0°C70°C287 K
M5M5T5636UG-2218874368-bit (524288-word by 36-bit) network SRAMMitsubishi-Electric-Corporation-Semiconductor-Group--0°C70°C287 K
M5M5T5636UG-2518874368-bit (524288-word by 36-bit) network SRAMMitsubishi-Electric-Corporation-Semiconductor-Group--0°C70°C287 K
M5M5W816TP-70HI8388608-bit (524288-word by 16-bit) SMOS static RAMMitsubishi-Electric-Corporation-Semiconductor-GroupTSOP440°C70°C68 K
M5M5W816TP-85HI8388608-bit (524288-word by 16-bit) SMOS static RAMMitsubishi-Electric-Corporation-Semiconductor-GroupTSOP440°C70°C68 K
M5M5W816WG-85HI8388608-bit (524288-word by 16-bit) SMOS static RAMMitsubishi-Electric-Corporation-Semiconductor-Group-48-40°C85°C102 K
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