| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| KM68257ETG-10 | 32Kx8 bit high-speed CMOS static RAM (5V operating), 10ns | Samsung-Electronic | TSOP I | 28 | 0°C | 70°C | 166 K |
| KM68257ETG-12 | 32Kx8 bit high-speed CMOS static RAM (5V operating), 12ns | Samsung-Electronic | TSOP I | 28 | 0°C | 70°C | 166 K |
| KM68257ETG-15 | 32Kx8 bit high-speed CMOS static RAM (5V operating), 15ns | Samsung-Electronic | TSOP I | 28 | 0°C | 70°C | 166 K |
| KM684000BLGI-7 | 512Kx8 bit CMOS static RAM, 70ns | Samsung-Electronic | SOP | 32 | -40°C | 85°C | 171 K |
| M68AF127B | 1 MBIT (128K X8) 5.0V ASYNCHRONOUS SRAM | SGS-Thomson-Microelectronics | - | - | - | - | 354 K |
| M68AR024D | 16 MBIT (1M X16) 1.8V ASYNCHRONOUS SRAM | SGS-Thomson-Microelectronics | - | - | - | - | 145 K |
| M68AR512D | 8 MBIT (512K X16) 1.8V ASYNCHRONOUS SRAM | SGS-Thomson-Microelectronics | - | - | - | - | 140 K |
| M68AW064F | 1 MBIT (64K X16) 3.0V ASYNCHRONOUS SRAM | SGS-Thomson-Microelectronics | - | - | - | - | 265 K |
| M68AW127B | 1 MBIT (128K X8), 3.0V ASYNCHRONOUS SRAM | SGS-Thomson-Microelectronics | - | - | - | - | 327 K |
| M68AW512D | 8 MBIT (512K X16) 3.0V ASYNCHRONOUS SRAM | SGS-Thomson-Microelectronics | - | - | - | - | 124 K |
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