| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| M6MGB160S2BVP | 16,777,216-bit (1048,576-word by 16-bit) CMOS 3.3V-only, block erase flash memory | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 48 | -20°C | 85°C | 258 K |
| M6MGB160S4BVP | 16777216-bit (1048576-word by 16-bit) CMOS 3.3V-only flash memory | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 48 | -20°C | 85°C | 257 K |
| M6MGB162S2BVP | 16777216-bit (1048576-word by 16-bit) CMOS 3.3V-only flash memory | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 48 | -20°C | 85°C | 235 K |
| M6MGB162S4BVP | 16777216-bit (1048576-word by 16-bit) CMOS 3.3V-only flash memory | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 48 | -20°C | 85°C | 239 K |
| M6MGT160S2BVP | 16,777,216-bit (1048,576-word by 16-bit) CMOS 3.3V-only, block erase flash memory | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 48 | -20°C | 85°C | 258 K |
| M6MGT166S4BWG | 16777216-bit CMOS 3.3V-only, block erase flash memory | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 72 | -20°C | 85°C | 259 K |
| [1] 2 |
|---|
