| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| APT30M70BVFR | 300V, 48A power MOS V transistor | Advanced-Power-Technology-APT | - | 3 | -55°C | 150°C | 66 K |
| APT30M70BVR | 300V, 48A power MOS V transistor | Advanced-Power-Technology-APT | - | 3 | -55°C | 150°C | 63 K |
| APT40M70JVR | 400V, 53A power MOS V transistor | Advanced-Power-Technology-APT | - | 3 | -55°C | 150°C | 69 K |
| APT40M70LVR | 400V, 57A power MOS V transistor | Advanced-Power-Technology-APT | - | 3 | -55°C | 150°C | 62 K |
| CMPDM7002A | N-channel enhancement-mode surface mount mosfet | distributor | - | 3 | -65°C | 150°C | 100 K |
| CMXDM7002A | 60 V, dual N-channel enhancement-mode surface mount mosfet | distributor | SOT | 6 | -65°C | 150°C | 87 K |
| FU-68PDF-520M70B | Wavelength:1553nm DFB-LD module with polarization maintaining fiber pigtail | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 14 | -20°C | 70°C | 105 K |
| SM703 | 80 Watt, silicon gate enhancement mode RF power VDMOS transistor | distributor | - | 4 | -65°C | 150°C | 36 K |
| SM704 | 125 Watt, silicon gate enhancement mode RF power VDMOS transistor | distributor | - | 4 | -65°C | 150°C | 37 K |
| SM705 | 150 Watt, silicon gate enhancement mode RF power VDMOS transistor | distributor | - | 4 | -65°C | 150°C | 36 K |
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