| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| MA3S781D | Silicon epitaxial planer type Schottky barrier diode | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 45 K |
| MA3S795 | Silicon epitaxial planer type Schottky barrier diode | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 46 K |
| MA3S795E | Silicon epitaxial planer type Schottky barrier diode | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 46 K |
| MA3X701 | Silicon epitaxial planer type Schottky barrier diode | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 48 K |
| MA3X703 | Silicon epitaxial planer type Schottky barrier diode | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 48 K |
| MA3X704 | Silicon epitaxial planer type Schottky barrier diode | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 49 K |
| MA3X704A | Silicon epitaxial planer type Schottky barrier diode | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 49 K |
| MA3X704D | Silicon epitaxial planer type Schottky barrier diode | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 47 K |
| MA3X704E | Silicon epitaxial planer type Schottky barrier diode | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 47 K |
| MA3X716 | Silicon epitaxial planer type Schottky barrier diode | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 46 K |
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