| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 1MB15D-060 | Fuji discrete package IGBT | distributor | - | 3 | - | - | 279 K |
| FMB150 | NPN silicon RF power transistor | Advanced-Semiconductor-Inc- | - | 4 | -65°C | 200°C | 18 K |
| FMB175 | NPN silicon RF power transistor | Advanced-Semiconductor-Inc- | - | 6 | -65°C | 200°C | 17 K |
| MB15C101PFV | IF band PLL freguency synthesizer | Fujitsu-Microelectronis | plastic SSOP | 8 | -40°C | 85°C | 151 K |
| MB15C101PV1 | IF band PLL freguency synthesizer | Fujitsu-Microelectronis | plastic BCC | 16 | -40°C | 85°C | 151 K |
| MB15C103PFV | IF band PLL freguency synthesizer | Fujitsu-Microelectronis | plastic SSOP | 8 | -40°C | 85°C | 150 K |
| VMB10-12F | NPN silicon RF power transistor | Advanced-Semiconductor-Inc- | - | 4 | -65°C | 200°C | 17 K |
| VMB10-12S | NPN silicon RF power transistor | Advanced-Semiconductor-Inc- | - | 4 | -65°C | 200°C | 16 K |
| VMB100-12 | NPN silicon RF power transistor | Advanced-Semiconductor-Inc- | - | 4 | -65°C | 200°C | 17 K |
| VMB150-28 | NPN silicon RF power transistor | Advanced-Semiconductor-Inc- | - | 6 | -65°C | 200°C | 17 K |
| [1] [2] [3] 4 [5] [6] [7] [8] [9] [10] |
|---|
