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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
1SMB3EZ11Surface mount silicon zener diode. Power 3.0 Watts. Nominal zener voltage Vz = 11 V. Test current Izt = 68 mAdistributor-2-55°C150°C128 K
1SMB3EZ12Surface mount silicon zener diode. Power 3.0 Watts. Nominal zener voltage Vz = 12 V. Test current Izt = 63 mAdistributor-2-55°C150°C128 K
1SMB3EZ13Surface mount silicon zener diode. Power 3.0 Watts. Nominal zener voltage Vz = 13 V. Test current Izt = 58 mAdistributor-2-55°C150°C128 K
1SMB3EZ14Surface mount silicon zener diode. Power 3.0 Watts. Nominal zener voltage Vz = 14 V. Test current Izt = 53 mAdistributor-2-55°C150°C128 K
1SMB3EZ15Surface mount silicon zener diode. Power 3.0 Watts. Nominal zener voltage Vz = 15 V. Test current Izt = 50 mAdistributor-2-55°C150°C128 K
1SMB3EZ16Surface mount silicon zener diode. Power 3.0 Watts. Nominal zener voltage Vz = 16 V. Test current Izt = 47 mAdistributor-2-55°C150°C128 K
MB3510Single-phase silicon bridge rectifier. Max recurrent peak reverse voltage 1000V, max RMS bridge input voltage 700V, max DC blocking voltage 1000V. Max average forward rectified output current 35A at Tc=55degC.distributor-4-55°C175°C27 K
MB3510Single-phase silicon bridge rectifier. Max recurrent peak reverse voltage 1000V, max RMS bridge input voltage 700V, max DC blocking voltage 1000V. Max average forward rectified output current 35A at Tc=55degC.distributor-4-55°C175°C27 K
MB358Single-phase silicon bridge rectifier. Max recurrent peak reverse voltage 800V, max RMS bridge input voltage 560V, max DC blocking voltage 800V. Max average forward rectified output current 35A at Tc=55degC.distributor-4-55°C175°C27 K
MB358Single-phase silicon bridge rectifier. Max recurrent peak reverse voltage 800V, max RMS bridge input voltage 560V, max DC blocking voltage 800V. Max average forward rectified output current 35A at Tc=55degC.distributor-4-55°C175°C27 K
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