| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| IDT7MB4048S25P | 512 x 8 CMOS static RAM module | Integrated-Device-Technology-Inc- | DIP | 32 | 0°C | 70°C | 80 K |
| IDT7MB4048S30P | 512 x 8 CMOS static RAM module | Integrated-Device-Technology-Inc- | DIP | 32 | 0°C | 70°C | 80 K |
| IDT7MB4048S35P | 512 x 8 CMOS static RAM module | Integrated-Device-Technology-Inc- | DIP | 32 | 0°C | 70°C | 80 K |
| MB47385 | Dual operational amplifier | Fujitsu-Microelectronis | Plastic SIP | 9 | -20°C | 75°C | 106 K |
| MB47385 | Dual operational amplifier | Fujitsu-Microelectronis | plastic DIP | 8 | -20°C | 75°C | 106 K |
| MB47385 | Dual operational amplifier | Fujitsu-Microelectronis | plastic FPT | 8 | -20°C | 75°C | 106 K |
| MB4M | Bridge Rectifier | General-Semiconductor | MBM | - | - | - | 37 K |
| TPSMB43A | Surface Mount Automotive Transient Voltage Suppressor | General-Semiconductor | - | - | - | - | 63 K |
| VMB40-12F | NPN silicon RF power transistor | Advanced-Semiconductor-Inc- | - | 4 | -65°C | 200°C | 17 K |
| VMB40-12S | NPN silicon RF power transistor | Advanced-Semiconductor-Inc- | - | 4 | -65°C | 200°C | 16 K |
| [1] 2 [3] [4] [5] [6] [7] [8] [9] [10] |
|---|
