| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| M6MBT166S4BWG | CMOS 3.3V only flash memory | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 72 | -40°C | 85°C | 253 K |
| MMBTA93LT1 | High voltage transistor | Motorola | - | 3 | -55°C | 150°C | 145 K |
| MMBTH69LT1 | UHF/VHF transistor | Motorola | - | 3 | -55°C | 150°C | 74 K |
| MMBTH81LT1 | UHF/VHF transistor | Motorola | - | 3 | -55°C | 150°C | 73 K |
| WMBT3904 | NPN epitaxial silicon high voltage transistor Power dissipation 225mW. Collector current(max) 0.2A | Wing-Shing-Electronic-Co----manufacturer-of-power-semiconductors | - | 3 | - | - | 66 K |
| WMBT3906 | PNP epitaxial silicon high voltage transistor Power dissipation 225mW. Collector current(max) 0.2A | Wing-Shing-Electronic-Co----manufacturer-of-power-semiconductors | - | 3 | - | - | 66 K |
| WMBT5401LT1 | PNP silicon transistor. Collector-emitter voltage -150V. Collector-base voltage -160V. Emitter-base voltage -5.0V | Wing-Shing-Electronic-Co----manufacturer-of-power-semiconductors | - | 3 | - | - | 34 K |
| WMBT5551LT1 | NPN silicon transistor. Collector-emitter voltage 160V. Collector-base voltage 180V. Emitter-base voltage 6.0V | Wing-Shing-Electronic-Co----manufacturer-of-power-semiconductors | - | 3 | - | - | 36 K |
| WMBTA42 | NPN epitaxial silicon transistor. Power dissipation 225mW. Collector current(max) 500mA. | Wing-Shing-Electronic-Co----manufacturer-of-power-semiconductors | - | 3 | - | - | 73 K |
| WMBTA92 | NPN epitaxial silicon transistor. Power dissipation 225mW. Collector current(max) 500mA. | Wing-Shing-Electronic-Co----manufacturer-of-power-semiconductors | - | 3 | - | - | 71 K |
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