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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
MMBT3416LT3General purpose transistorMotorola-3-55°C150°C297 K
MMBT3640LT1Switching transistorMotorola-3-55°C150°C176 K
MMBT3904Small Signal Transistor (NPN)General-Semiconductor----136 K
MMBT3904LT1General purpose transistorMotorola-3-55°C150°C164 K
MMBT3904WT1General purpose transistorMotorola-3-55°C150°C296 K
MMBT3906Small Signal Transistor (PNP)General-Semiconductor----136 K
MMBT3906LT1General purpose transistorMotorola-3-55°C150°C221 K
MMBT3906WT1General purpose transistorMotorola-3-55°C150°C296 K
WMBT3904NPN epitaxial silicon high voltage transistor Power dissipation 225mW. Collector current(max) 0.2AWing-Shing-Electronic-Co----manufacturer-of-power-semiconductors-3--66 K
WMBT3906PNP epitaxial silicon high voltage transistor Power dissipation 225mW. Collector current(max) 0.2AWing-Shing-Electronic-Co----manufacturer-of-power-semiconductors-3--66 K
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