Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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FMBT3906 | 40 V, 200 mA PNP epitaxial planar transistor | distributor | - | 3 | - | - | 36 K |
MBT3906DW1T1 | 60 V, dual general purpose transistor | distributor | - | 6 | -55°C | 150°C | 422 K |
MMBT3906 | 40V; 200mA PNP small signal surface mount transistor. Ideal for medium power application and switching | distributor | - | 3 | -55°C | 150°C | 60 K |
MMBT3906 | 40 V, PNP small signal surface mount transistor | distributor | - | 3 | -55°C | 150°C | 202 K |
MMBT3906 | 40 V, general purpose transistor NPN silicon | distributor | SOT | 3 | -55°C | 150°C | 107 K |
MMBT3906 | 40 V, general purpose transistor NPN silicon | distributor | SOT | 3 | -55°C | 150°C | 107 K |
MMBT3906LT1 | 40 V, PNP general purpose transistor | distributor | - | 3 | -55°C | 150°C | 226 K |
MMBT3906T | 40V; 200mA PNP small signal surface mount transistor | distributor | - | 3 | -55°C | 150°C | 55 K |
MMBT3906WT1 | 60 V, PNP general purpose transistor | distributor | - | 3 | -55°C | 150°C | 455 K |
WMBT3906 | PNP epitaxial silicon high voltage transistor Power dissipation 225mW. Collector current(max) 0.2A | Wing-Shing-Electronic-Co----manufacturer-of-power-semiconductors | - | 3 | - | - | 66 K |
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