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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
CM10MD-12H10A IGBT module for medium power switching use, insulated typeMitsubishi-Electric-Corporation-Semiconductor-Group-21-40°C150°C158 K
CM15MD-12H15A IGBT module for medium power switching use, insulated typeMitsubishi-Electric-Corporation-Semiconductor-Group-21-40°C150°C166 K
CM20MD-12H20A IGBT module for medium power switching use, insulated typeMitsubishi-Electric-Corporation-Semiconductor-Group-21-40°C150°C187 K
CM30MD-12H30A IGBT module for medium power switching use, insulated typeMitsubishi-Electric-Corporation-Semiconductor-Group-21-40°C150°C143 K
CM50MD-12H50A IGBT module for medium power switching use, insulated typeMitsubishi-Electric-Corporation-Semiconductor-Group-21-40°C150°C149 K
IP120ASMD-121.5A, 12V Negative Voltage RegulatorSemelab-Plc-SMD18-55°C150°C41 K
IP140ASMD-121.0A, 12V Positive Voltage RegulatorSemelab-Plc-SMD18-55°C150°C55 K
IP140SMD-121.0A, 12V Positive Voltage RegulatorSemelab-Plc-SMD18-55°C150°C55 K
MH4S64CBMD-12268435456 (4194304- word by 64-bit) dynamic RAMMitsubishi-Electric-Corporation-Semiconductor-GroupTSOP1680°C70°C708 K
MH4S64CBMD-12B268435456 (4194304- word by 64-bit) dynamic RAMMitsubishi-Electric-Corporation-Semiconductor-GroupTSOP1680°C70°C708 K
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