| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| MGF1001BT | Tape carrier microwave power GaAs fet | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 3 | - | - | 153 K |
| MGFC5107 | Ka-band 3-stage self bias noise amplifier | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 8 | - | - | 43 K |
| MGFC5108 | Ka-band 3-stage self bias noise amplifier | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 8 | - | - | 43 K |
| MGFC5109 | Ka-band 3-stage self bias noise amplifier | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 8 | - | - | 37 K |
| MGFC5110 | Ka-band 3-stage self bias noise amplifier | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 8 | - | - | 35 K |
| MGFC5217 | Ka-band 3-stage self bias noise amplifier | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 8 | - | - | 42 K |
| MGFC5218 | Ka-band 2-stage power amplifier | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | - | - | - | 22 K |
| MGFK30V4045 | 14.0 - 14.5 GHz 1W internally matched GaAs fet | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 3 | - | - | 80 K |
| MGFK39V4045 | 14.0 - 14.5 GHz 8W internally matched GaAs fet | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 3 | - | - | 20 K |
| MGFL45V1920A | 1.9 - 2.0 GHz 32W internally matched GaAs fet | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 3 | - | - | 50 K |
| << [7] [8] [9] [10] [11] 12 [13] |
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