| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| MGFC1403 | GaA fet for microwave low-noise amplifiers | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | - | - | - | 232 K |
| MGFC36V6472A | 6.4-7.2 GHz band 4W internally matched GaAs FET | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 3 | - | - | 109 K |
| MGFC4419 | InGaAs HEMT chip | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 3 | - | - | 51 K |
| MGFC47V5864A | 5.8-6.4GHz band 50W internally matched GaAs fet | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 3 | - | - | 62 K |
| MGFC5211 | K-band 2-state power amplifier | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 6 | -20°C | 70°C | 24 K |
| MGFC5212 | K-band 2-state power amplifier | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 6 | -20°C | 70°C | 33 K |
| MGFC5213 | K-band 2-state power amplifier | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 10 | -20°C | 70°C | 28 K |
| MGFC5214 | Q-band 2-state power amplifier | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 8 | -20°C | 70°C | 34 K |
| MGFC5215 | K-band 2-state power amplifier | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 6 | -20°C | 70°C | 26 K |
| MGFC5216 | Q-band 4-state driver amplifier | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 10 | -20°C | 70°C | 31 K |
| [1] [2] [3] 4 [5] [6] [7] |
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