| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| MGP15N60U | Insulated Gate Bipolar Transistor N-Channel | ON-Semiconductor | - | 3 | - | - | 120 K |
| MGP20N60U | Insulated Gate Bipolar Transistor N-Channel | ON-Semiconductor | - | 3 | - | - | 120 K |
| MGP21N60E | Insulated Gate Bipolar Transistor N-Channel | ON-Semiconductor | - | 3 | - | - | 123 K |
| MGP3006X | GHz PLL with I2C bus and four chip addresses | Infineon-formely-Siemens | - | 14 | -20°C | 80°C | 450 K |
| MGP3006X6 | GHz PLL with I2C bus and four chip addresses | Infineon-formely-Siemens | - | 16 | -20°C | 80°C | 444 K |
| MGP4N60E | Insulated Gate Bipolar Transistor N-Channel | ON-Semiconductor | - | 3 | - | - | 120 K |
| MGP4N60ED | Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel | ON-Semiconductor | - | 3 | - | - | 146 K |
| MGP7N60E | Insulated Gate Bipolar Transistor N-Channel | ON-Semiconductor | - | 3 | - | - | 118 K |
| MGP7N60ED | Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel | ON-Semiconductor | - | 3 | - | - | 144 K |
| MGP7N80E | Insulated gate bipolar transistor | Motorola | - | 3 | -55°C | 150°C | 122 K |
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